3.1 - 123 3.1 400v, 500v, 1000v, up to 24 amp n-channel, dual size 6 high energy mosfets 4 11 r2 supersedes 2 07 r1 dual high current power mosfets in hermetic isolated sip package om6232ss OM6233SS om6230ss om6231ss om6227ss om6228ss features ? dual uncommitted mosfets ? isolated hermetic metal package ? size 6 die, high energy, high voltage ? fast switching, low drive current ? ease of paralleling for added power ? low r ds(on) ? available screened to mil-s-19500, tx, txv and s levels description this series of hermetically packaged products feature the latest advanced mosfet and packaging technology. they are ideally suited for military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. this series also features avalanche high energy capability at elevated temperatures. maximum ratings part number v ds r ds(on) i d (amp) *package om6227ss 400 .20 24 s-6d om6228ss 500 .27 22 s-6d om6230ss 1000 1.30 10 s-6d om6231ss 400 .20 24 s-6e om6232ss 500 .27 22 s-6e OM6233SS 1000 1.30 10 s-6e * see mechanical drawing 1 3 2 4 6 5 source source drain drain gate gate body diode body diode schematic
3.1 - 124 om6227ss - OM6233SS 3.1 unclamped drain-to-source avalanche characteristics (t j < 150) symbol value unit single pulse drain-to-source avalanche energy t j = 25c w dss (1) 1000 t j = 100c 160 mj repetitive pulse drain-to-source avalanche energy w dss (2) 25 (1) v dd = 50v, i d = 10a (2) pulse width and frequency is limited by t j(max) and thermal response. electrical characteristics: 400v (per mosfet) (t c = 25 unless otherwise noted) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage (v gs = 0, i d = 0.25 ma) v (br)dss 400 - - vdc zero gate voltage drain i dss madc (v ds = 400 v, v gs = 0) - - 0.25 (v ds = 320 v, v gs = 0, t j = 125 c) - - 1.0 gate-body leakage current, forward (v gsf = 20 vdc, v ds = 0) i gssf - - 100 nadc gate-body leakage current, reverse (v gsr = 20 vdc, v ds = 0) i gssr - - 100 nadc on characteristics * gate-threshold voltage v gs(th) vdc (v ds = v gs , i d = 0.25 madc 2.0 3.0 4.0 (t j = 125 c) 1.5 - 3.5 static drain-source on-resistance (v gs = 10 vdc, i d = 13 adc) r ds(on) - - 0.20 ohm drain-source on-voltage (v gs = 10 vdc) v ds(on) vdc (i d = 24 a) - - 5.0 (i d = 12 a, t j = 125 c) - - 5.0 forward transconductance (v ds = 15 vdc, i d = 12a adc) g fs 14 - - mhos dynamic characteristics input capacitance (v ds = 25 v, v gs = 0, c iss - 4000 - pf output capacitance f = 1.0 mhz) c oss - 550 - transfer capacitance c rss - 110 - switching characteristics turn-on delay time t d(on) -35-ns rise time (v dd = 250 v, i d = 24 a, t r -95- turn-off delay time r gen = 4.3 ohms) t d(off) -80- fall time t f -80- total gate charge (v ds = 400 v, i d = 24 a, q g - 110 14 0nc gate-source charge v gs = 10 v) q gs -20- gate-drain charge q gd -80- source drain diode characteristics forward on-voltage v sd - 1.1 1.6 vdc forward turn-on time (i s = 24 a, d/dt = 100 a/s) t on ** ns reverse recovery time t rr - 500 1000 electrical characteristics: 500v (per mosfet) (t c = 25 unless otherwise noted) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage (v gs = 0, i d = 0.25 ma) v (br)dss 500 - - vdc zero gate voltage drain i dss madc (v ds = 500 v, v gs = 0) - - 0.25 (v ds = 500 v, v gs = 0, t j = 125 c) - - 1.0 gate-body leakage current, forward (v gsf = 20 vdc, v ds = 0) i gssf - - 100 nadc gate-body leakage current, reverse (v gsr = 20 vdc, v ds = 0) i gssr - - 100 nadc on characteristics * gate-threshold voltage v gs(th) vdc (v ds = v gs , i d = 0.25 madc 2.0 3.0 4.0 (t j = 125 c) 1.5 - 3.5 static drain-source on-resistance (v gs = 10 vdc, i d = 13 adc) r ds(on) - - 0.27 ohm drain-source on-voltage (v gs = 10 vdc) v ds(on) vdc (i d = 24 a) - - 8.0 (i d = 12 a, t j = 125 c) - - 8.0 forward transconductance (v ds = 15 vdc, i d = 13 adc) g fs 13 - - mhos dynamic characteristics input capacitance (v ds = 25 v, v gs = 0, c iss - 4000 - pf output capacitance f = 1.0 mhz) c oss - 480 - transfer capacitance c rss -95- switching characteristics turn-on delay time t d(on) -32-ns rise time (v dd = 250 v, i d = 24 a, t r -95- turn-off delay time r gen = 4.3 ohms) t d(off) -75- fall time t f -75- total gate charge (v ds = 400 v, i d = 24 a, q g - 115 140 nc gate-source charge v gs = 10 v) q gs -20- gate-drain charge q gd -60- source drain diode characteristics forward on-voltage v sd - 1.1 1.6 vdc forward turn-on time (i s = 24 a, d/dt = 100 a/s) t on ** ns reverse recovery time t rr - 500 1000 * indicates pulse test = 300 sec, duty cycle = 2% ** limited by circuit inductance * indicates pulse test = 300 sec, duty cycle = 2% ** limited by circuit inductance
3.1 - 125 om6227ss - OM6233SS 3.1 absolute maximum ratings per mosfet (t c = 25c unless otherwise noted) om6227/ om6228/ om6230/ parameter om6231 om6232 om6233 units v ds drain-source voltage 400 500 1000 v v dgr drain-gate voltage (r gs = 1 m ) 400 500 1000 v i d @ t c = 25c continuous drain current 24 22 10 a i dm pulsed drain current 92 85 30 a p d @ t c = 25c maximum power dissipation 165 165 165 w p d derate above 25c case 1.31 1.31 1.31 w/c w dss (1) single pulse energy drain-to-source @ 25c 1000 1000 500 mj t j operating and t stg storage temperature range -55 to +150 -55 to +150 -55 to +150 c lead temperature (1/8" from case for 5 secs.) 275 275 275 c thermal resistance (maximum) at t a = 25c r thjc junction-to-case .76 c/w r thja junction-to-ambient 35 c/w free air operation electrical characteristics: 1000v (per mosfet) (t c = 25 unless otherwise noted) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage (v gs = 0, i d = 0.25 ma) v (br)dss 1000 - - vdc zero gate voltage drain i dss m adc (v ds = 1000 v, v gs = 0) - - 10 (v ds = 1000 v, v gs = 0, t j = 125 c) - - 100 gate-body leakage current, forward (v gsf = 20 vdc, v ds = 0) i gssf - - 100 nadc gate-body leakage current, reverse (v gsr = 20 vdc, v ds = 0) i gssr - - 100 nadc on characteristics * gate-threshold voltage v gs(th) vdc (v ds = v gs , i d = 0.25 madc 2.0 3.0 4.0 (t j = 125 c) 1.5 - 3.5 static drain-source on-resistance (v gs = 10 vdc, i d = 5 adc) r ds(on) - - 1.3 ohm drain-source on-voltage (v gs = 10 vdc) v ds(on) vdc (i d = 10 a) --15 (i d = 5 a, t j = 125 c) - - 15.3 forward transconductance (v ds = 15 vdc, i d = 5 adc) g fs 5.0 - - mhos dynamic characteristics input capacitance (v ds = 25 v, v gs = 0, c iss - 5500 - pf output capacitance f = 1.0 mhz) c oss - 530 - transfer capacitance c rss -90- switching characteristics turn-on delay time t d(on) -60-ns rise time (v dd = 500 v, i d = 10 a, t r - 115 - turn-off delay time r gen = 9.1 ohms t d(off) - 240 - fall time v gs = 10 v) t f - 140 - total gate charge (v ds = 400 v, i d = 10 a, q g - 140 - -nc gate-source charge v gs = 10 v) q gs --- gate-drain charge q gd --- source drain diode characteristics forward on-voltage v sd - - 1.1 vdc forward turn-on time (i s = 10 a, d/dt = 100 a/s) t on ** ns reverse recovery time t rr - 600 1100 * indicates pulse test = 300 sec, duty cycle = 2% ** limited by circuit inductance
om6227ss - OM6233SS 3.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 .250 .270 max 1.375 1.000 ?002 .060 dia. 6 plcs. .545 1.625 1.875 .295 .125 .250 2 plcs. .125 dia. 2 plcs. .500 min. .040 .145 .125 .200 typ. .187 .275 .270 max. 1.375 1.000 ?002 .060 dia. 6 plcs. .545 .770 .150 dia. 2 plcs. .500 min. .040 .145 .118 .200 typ. mechanical outline package s-6d mechanical outline package s-6e pin 1: drain pin 2: source pin 3: gate pin 4: gate pin 5: source pin 6: drain pin 1: drain pin 2: source pin 3: gate pin 4: gate pin 5: source pin 6: drain 123456 123456
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